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Intel and Micron to Disband 3D XPoint Memory Partnership

3D Xpoint™ technology is up to 1000x faster than NAND and an individual die can store 128Gb of data.

Micron and Intel have announced that their partnership to develop 3D XPoint memory will be disbanded over the next 12 months.

The partnership will be disbanded once the second generation of the technology has been completed next year. Technology development beyond the second generation of 3D XPoint technology will be pursued independently by the two companies.

Micron has a strong track record of innovation with 40 years of world-leading expertise in memory technology development, and we will continue driving the next generations of 3D XPoint technology,” said Scott DeBoer, executive vice president of Technology Development at Micron. “We are excited about the products that we are developing based on this advanced technology, which will allow our customers to take advantage of unique memory and storage capabilities. By developing 3D XPoint technology independently, Micron can better optimize the technology for our product roadmap while maximising the benefits for our customers and shareholders,” added DeBoer.

“Intel has developed a leadership position delivering a broad portfolio of Optane products across client and data centre markets with strong support from our customers,” said Rob Crooke, senior vice president and general manager of Non-Volatile Memory Solutions Group at Intel Corporation. “Intel Optane’s direct connection to the world’s most advanced computing platforms is achieving breakthrough results in IT and consumer applications. We intend to build on this momentum and extend our leadership with Optane, which combined with our high-density 3D NAND technology offers the best solutions for today’s computing and storage needs.”

The two companies will continue to manufacture memory based on 3D XPoint technology at the Intel-Micron Flash Technologies (IMFT) facility in Lehi, Utah. 3D Xpoint is a new class of non-volatile memory designed to provide lower latency and greater endurance than NAND memory.

This story appears here as part of a cross-publishing agreement with Scientific Computing World.

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Comments

  1. Sharan Kalwani says:

    I am little puzzled. Just recently there was this announcement (July 16th – which is a few days ago)….
    http://investors.micron.com/releasedetail.cfm?ReleaseID=1072241&_ga=2.262800586.75812783.1532011327-1533906157.1532011327

    So now it is soon to be gone?

    Some clarification (or redaction) is requested!

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