In this video, Frank Ferro from Rambus examines the current performance bottlenecks in HPC, drilling down into power and performance for different memory options. “HBM2E offers the capability to achieve tremendous memory bandwidth. Four HBM2E stacks connected to a processor will deliver over 1.6 TB/s of bandwidth. And with 3D stacking of memory, high bandwidth and high capacity can be achieved in an exceptionally small footprint. Further, by keeping data rates relatively low, and the memory close to the processor, overall system power is kept low.”
Samsung Launches Flashbolt High Bandwidth 2E Memory
February 5, 2020 by
Today Samsung Electronics launched ‘Flashbolt,’ its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize HPC systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner. “With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.
