SEOUL, Korea – Sept. 1, 2023 – Samsung Electronics today said it has developed the industry’s first 32-gigabit (Gb) DDR5 DRAM using 12 nanometer (nm)-class process technology. This comes after Samsung began mass production of its 12nm-class 16Gb DDR5 DRAM in May 2023.
SK hynix Announces 9.6 Gbps DRAM LPDDR5T
January 25, 2023 by
Seoul, January 25, 2023 – SK hynix Inc. today said it has developed the world’s fastest mobile DRAM ‘LPDDR5T (Low Power Double Data Rate 5 Turbo)’ and provided sample products to customers. The new product operates at a data rate of 9.6 gigabits per second (Gbps), 13 percent faster than the previous generation LPDDR5X* unveiled […]
Samsung Electronics Claims Industry’s First 12nm-Class DDR5 DRAM
December 21, 2022 by
SEOUL – December 21, 2022 – Samsung Electronics Co., Ltd. today announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD. Leveraging the latest DDR5 standard, Samsung said its 12nm-class DRAM will help unlock speeds […]
Micron: DDR5 Server DRAM Now Available
July 6, 2022 by
BOISE, Idaho, July 06, 2022 — Memory and storage company Micron Technology, Inc. (Nasdaq: MU), today announced the availability of Micron DDR5 server DRAM in support of industry qualification of next-generation Intel and AMD DDR5 server and workstation platforms. Micron said the move to DDR5 memory enables up to an 85 percent increase in system […]
Roll Over von Neumann? Samsung Claims Progress on the Compute-Memory Divide for HPC, AI
February 18, 2021 by
Samsung is claiming progress on the ages-old compute-memory bottleneck inherent in the classical von Neumann computing architecture. The company has announced what it said is the industry’s first High Bandwidth Memory (HBM) integrated with artificial intelligence (AI) processing power — the HBM-PIM. The company said the processing-in-memory (PIM) architecture brings AI computing capabilities inside high-performance […]
Micron Delivers 1α DRAM Technology
January 26, 2021 by
Boise, Idaho, Jan. 26, 2021 – Micron Technology today announced volume shipment of 1α (1-alpha) node DRAM products that the company said are built using advanced DRAM process technology and offering improvements in bit density, power and performance. “This milestone reinforces Micron’s competitive strength and complements its recent breakthroughs with the world’s fastest graphics memory […]
MemVerge Says Memory Machine Offers Big Memory That’s DRAM-Fast and Highly Available
September 23, 2020 by
Big Memory software specialist MemVerge today announced GA of Memory Machine software that, used with Intel Optane persistent memory, “fundamentally changes in-memory computing infrastructure,” according to the company. MemVerge said the offering offers the benefits of high-performance DRAM along with lower-cost and persistent memory, “the industry’s first software-defined pools of DRAM and persistent memory that […]
Micron Starts Volume Production of 1z Nanometer DRAM Process Node
August 18, 2019 by
Today Micron Technology announced advancements in DRAM scaling, making Micron the first memory company to begin mass production of 16Gb DDR4 products using 1z nm process technology. “The optimized balance between power and performance will be a key differentiator for applications including, among others, artificial intelligence, autonomous vehicles, 5G, mobile devices, graphics, gaming, network infrastructure and servers.”
NVMe SSDs and DRAM for High Performing Mixed Workloads
August 23, 2018 by
This guest article from Kingston Technology covers how NVMe SSDs and DRAM are being used for high performing mixed workloads.
