BOISE, Idaho, Feb. 25, 2025 — Micron Technology, Inc. (Nasdaq: MU) today said it is the first company to ship samples of its 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers. The company said “This 1γ DRAM milestone builds on Micron’s previous 1α (1-alpha) and […]
Samsung Announces Production of QLC 9th-Gen V-NAND Flash Memory
September 12, 2024 by
Sept. 12, 2024 — Memory technology company Samsung Electronics today announced it has begun mass production of its 1Tb quad-level cell (QLC) 9th-generation vertical NAND (V-NAND) flash memory. “With the industry’s first mass production of QLC 9th-generation V-NAND, following the industry’s first triple-level cell (TLC) 9th-generation V-NAND production in April this year, Samsung is solidifying […]
Micron Announces Volume Production of HBM3E
February 26, 2024 by
BOISE, Idaho, Feb. 26, 2024 — Memory and storage company Micron Technology, Inc. today announced it has begun volume production of its HBM3E (High Bandwidth Memory 3E) solution. Micron’s 24GB 8H HBM3E will be part of NVIDIA H200 Tensor Core GPUs, which will begin shipping in the second calendar quarter of 2024. This milestone positions […]
