Seoul, June 9, 2022 – SK hynix announced that it began mass production of HBM3, high-performance memory that vertically interconnects multiple DRAM chips “and dramatically increases data processing speed in comparison to traditional DRAM products,” the company said. HBM3 DRAM is the 4th generation HBM product, succeeding HBM (1st generation), HBM2 (2nd generation) and HBM2E (3rd generation).
The announcement comes seven months after the company became the first in the industry to develop HBM3 in October, and is expected to solidify the company’s leadership in the premium DRAM market, according SK hynix.
With accelerating advancements in cutting-edge technologies such as artificial intelligence and big data, major global tech companies are seeking ways to quickly process rapidly increasing volumes of data. HBM, with significant competitiveness in data processing speed and performance compared with traditional DRAM, is expected to draw broad industry attention and see rising adoption.
NVIDIA has recently completed its performance evaluation of SK hynix’s HBM3 samples. SK hynix will provide HBM3 for NVIDIA systems expected to ship starting in the third quarter of this year. SK hynix will expand HBM3 volume in the first half in accordance with NVIDIA’s schedule.
The highly anticipated NVIDIA H100 is the world’s largest and most powerful accelerator. SK hynix’s HBM3 is expected to enhance accelerated computing performance with up to 819GB/s of memory bandwidth, equivalent to the transmission of 163 FHD (Full-HD) movies (5GB standard) every second.
Kevin (Jongwon) Noh, president and chief marketing officer at SK hynix, states that the company has secured top-notch competitiveness in the premium DRAM market through its close work with NVIDIA. “We aim to become a solution provider that deeply understands and addresses our customers’ needs through continuous open collaboration,” he said.
