Over at Desktop Engineering, John Newman writes that researchers at UCLA’s Henry Samueli School of Engineering and Applied Science have developed a new type of memory that requires less energy than current technology. According to the research team, magnetoelectric random access memory (MeRAM) is up to 1,000 times more energy efficient than other types of memory, while retaining the high density, read speeds and other characteristics of current generation memory.
The ability to switch nanoscale magnets using voltages is an exciting and fast-growing area of research in magnetism,” said Pedram Khalili, a research associate in electrical engineering and project manager. “This work presents new insights into questions such as how to control the switching direction using voltage pulses, how to ensure that devices will work without needing external magnetic fields, and how to integrate them into high-density memory arrays.”
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